Typical Characteristics
30
25
V GS = 4.5V
4.0V
3.5V
2.5V
2.5
20
3.0V
2
V GS = 2.0V
2.0V
15
1.5
2.5V
10
1
3.0V
3.5V
4.0V
4.5
5
1.5V
0
0.5
0
0.5
1
1.5
2
2.5
3
0
5
10
15
20
25
30
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.8
0.08
I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
I D = 7.4A
V GS = 4.5V
0.07
I D = 7.4 A
0.06
1.4
0.05
1.2
0.04
T A = 125 C
1.0
0.8
0.03
0.02
o
T A = 25 C
0.6
0.01
o
-50
-25
0
25
50
75
100
125
150
1
2
3
4
T J , JUNCTION TEMPERATURE ( C)
30
o
Figure 3. On-Resistance Variation with
Temperature.
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
T A = -55 C
25 C
125 C
T A = 125 C
25
20
V DS = 5V
o
o
o
10
1
V GS = 0V
o
25
-55 C
15
10
5
0
0.1
0.01
0.001
0.0001
o
o
0.5
1.5
2.5
3.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
NDS8425 Rev D (W)
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相关代理商/技术参数
NDS8425 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
NDS8426 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single N-Channel Enhancement Mode Field Effect Transistor
NDS8426A 功能描述:MOSFET Single N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8426A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
NDS8433 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8434 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8434_Q 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8434A 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube